2SA1160 transistor (pnp) feature power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm: -2a collector-base voltage v (br)cbo : -20 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -1ma , i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-10ma , i b =0 -10 v emitter-base breakdown voltage v (br)ebo i e = -1ma, i c =0 -6 v collector cut-off current i cbo v cb = -20 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -6 v, i c =0 -0.1 a h fe(1) v ce =-1v, i c = -0.5a 140 600 dc current gain h fe(2) v ce =-1v, i c = -4a 60 collector-emitter saturation voltage v ce(sat) i c = -2a, i b =-50ma -0.2 -0.5 v transition frequency f t v ce =-1v, i c = -0.5a 140 mhz output capacitance c ob v ce =-10v, i e =0,f=1 mhz 50 pf classification of h fe rank a b c range 140-280 200-400 300-600 to-92mod 1. emitter 2. collector 3. base 123 2SA1160 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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